看到一則舊文,一陣子以前的新聞,有效的專利就是經過訴訟過的專利:
台積電(TSMC)與UniRAM Technology產生的訴訟過程中有提到一件美國專利案─美國專利6,108,229
雖然該案被無效不成是因為別的原因,但是至少也是個有用的專利
該案為具有多維第一級位元線的記憶體裝置
雖不懂這專利是什麼,但可從中學習到一些東西
有以下看法:
1. 該案是談到一個DRAM陣列,其中的記憶元的電晶體閘級與周邊電路一樣"厚"
如此而已
2. 表示,一些尺度上的技術特徵確實可以"專利"
3. 之後在wherein的部分提到,是因為可使兩者的門檻電壓"實質"上一樣
4. 表示不僅尺度上是可專利,而且要帶出技術特徵
Claim 1:
1. A DRAM (dynamic random access memory) cell array supported on a substrate comprising:
a plurality of memory cells each having a select-transistor wherein each of said select-transistor having a select-transistor-gate;
a peripheral logic-circuit having logic-transistors wherein each of said logic-transistors having a logic-transistor-gate;
said select-transistor-gate and said logic-circuit-gate having substantially a same thickness;
said select-transistor for each of said memory cells having a select-transistor threshold voltage and each of said logic-transistors of said peripheral logic-circuit having a logic-transistor threshold voltage wherein said select-transistor threshold voltage is substantially the same as said logic-transistor threshold voltage.
Ron
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